|
 |
Untitled Document
|
|
|
|
 |
 HOME
> Rearch > III-Nitride
MOCVD |
 |
|
| MOCVD is the most popular method
of growing III-V compound semiconductor epilayer structures
for both basic research and photonic/electronic device applications.
Since III-V semiconductors are central material systems in our
research, we are currently running a MOCVD system for the growth
of GaN-based material systems. In addition to the growth of
conventional structures such as quantum wells and heterostructures,
we are also interested in the growth of quantum dots and selective-area-growth
(SAG) for more advanced photonic quantum devices. |
|
Untitled Document
Untitled Document
|
